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56 IC INDUSTRY AWARDS PREVIEW
for integrated passives enabling advanced
designs, eliminating the need for
prototyping and dummy plating patterns.
The electrochemical replication principle
of ECPR combines the precision and
resolution of advanced lithography with
the ease and efficiency of electrochemical
SURFACE TECHNOLOGY
particularly important for advanced deposition into one single integrated
SYSTEMS PLC
processes that use shallower implants and process solution.ECPR is a clean
www.stsystems.com
thinner films. For photoresist stripping, technology which significantly reduces
ViPR Technology eliminates the ashing costs for equipment, maintenance,
Pegasus DRIE technology
step for all but the highest implant doses, personnel, clean room, and direct
reducing capital cost, footprint, materials as well as provides high
Launched in September 2005, STS’
processing time and process complexity. throughput capabilities due to its
Pegasus system utilises the “Bosch
After salicide processes, including cycletime efficiency. Replisaurus
advanced low temperature NiPt Technologies offers complete production
Process” which is a well established
processes, ViPR Technology effectively solutions including IP enabled equipment,
method of anisotropically etching deep,
removes unreacted metal without replication templates (masters), chemicals
high aspect ratio features into silicon,
attacking the silicide. Ashless photoresist and technology transfer.
switching between a passivating C4F8
and effective removal of residual metals
plasma and a reactive SF6 plasma. This
following salicide are critical enabling
SOLVAY FLUOR
dry plasma process offers significant
technologies for today's most advanced
www.solvay-fluor.com
advantages over the competing laser
processes. ZETA's VIPR technology
drilling technique, particularly when via
enables these applications and increases
F2 mixture for chamber cleaning
holes are <10um and via hole densities
productivity, reduces capital and
are high.Pegasus has a unique plasma
operating costs, and improves process Solvay Fluor can deliver worldwide F2
source design which offers market-leading
yields contributing directly to more mixtures in cylinders. The Fraunhofer
profitable manufacturing operations. Institute in Munich has tested this gas
silicon etch rates, typically 30% faster
mixture as cleaning agent, demonstrating
than conventional de-coupled "high rate"
REPLISAURUS
its superior performance over the actual
plasma sources. This high etch rate
www.replisaurus.com cleaning recipes on an AMAT P500 tool.
increases throughput, reducing cost per
The F2 mixture is relatively easy to
die. Important factors when etching very
ElectroChemical Pattern
handle, provided the right passivation deep features such as via holes into silicon
Replication ECPR
procedure is carried out before utilisation
is that conventional DRIE sources tend to
A single passivation procedure assures the
have non uniform plasma characteristics
Replisaurus’ advanced metallisation reliability of the delivery system for ever.
across the wafer, which can lead to
technology targets micro and nanoscale All necessary equipments (mass flow
feature tilting and a corresponding
metal structures used for applications controllers, gaskets etc...) are available
reduction in device yield, particularly for
within microelectronics, optoelectronics, on the market; it was possible to set up
sensors, flat panel displays and advanced the facility in short time and with
large diameter wafers typically used in 3D
circuit boards. ECPR technology redefines comparable costs with an NF3 delivery
packaging applications. Pegasus has been
the fundamentals of micro and nanoscale system. The tests have shown the F2
designed in such a way to minimise this
metallisation and delivers a process with mixtures clean faster than NF3 and CF4
effect by careful control of the plasma
superior performance/cost ratio. recipes. In particular, the NF3 recipe
conditions (including ions, electrons and
The integrated ElectroChemical requires 60 sec to etch 1 micron SiO2 radicals) across the whole wafer surface.
Pattern Replication (ECPR) process is an layer, whilst F2 mixture needs only 47
An undesirable characteristic of the
enabling technology targeted at key sec. This means a throughput advantage
Bosch Process is the “scalloping” of the
growth markets such as integrated of the 21%. The usage of material too is
via sidewall, caused by the isotropic
passives, copper pillars and 3D reduced, while the above mentioned
nature of each short SF6 etch step. The
integration (TSV). The company has performance is obtained with 0,24gr of
shorter the etch step, the smaller the
demonstrated fine pitch/high resolution F2, whilst one needs the double amount of
capability (≤280nm space) and NF3.
“scallop” giving smoother sidewalls.
significantly improved thickness This has a consequence not only on
Sidewall roughness should be
uniformity. The Replisaurus process offers costs, but also on the environmental
minimised in TSV etching because a
a simple and cost effective integrated balance of the process because F2 has
rough sidewall could cause problems with
solution eliminating several traditional GWP=0 and it is easy to abate.
subsequent via hole filling steps. The
process steps thereby reducing complexity. The AMAT P5000 tool did not show system minimises sidewall roughness
The number of process steps in a typical any compatibility problem with the new
through a combination of hardware and
metallisation flow are reduced from eight mixture. The particles generated during
software features which allow very fast
(8) to three (3), resulting in shorter cycles the cleaning process are in line with the
switching between the passivating and
times and a simplified production flow. industrial standard
etch plasmas. Each individual etch step
ECPR is a fab friendly,environmentally
can be very short, giving smooth sidewalls
clean process which does not use any ● Best throughput cleaning mixture
solvents, developers or strippers and has
without reducing the total etch time, and
● Low gas consumption
extremely fast plating rates. The ECPR
consequently the overall etch rate is not
● Low process environmental impact
technology is a design enabling technology
adversely affected.
● Ease of implementation
www.euroasiasemiconductor.com July 2008
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