News vFinal DR 27/6/08 12:28 Page 6
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NEWS DESK
Silicon photonics go boom
THE RESEARCH PROJECT on silicon and three top European research centres networks. In order to achieve these goals
photonic components, ‘BOOM’, supported (Heinrich-Hertz-Institut, IMEC, IHP). BOOM aims to develop a SOI optical
by the EU Seventh Research Framework The project is co-ordinated by the board technology capable to blend the
Programme has been launched Institute of Communications (ICCS) & cost effectiveness and integration
successfully in May 2008. All consortium Computer Systems of the National potential of silicon with the high
partners have gathered for the kick off Technical University of Athens (NTUA). bandwidth and processing power of III/V
meeting in Athens for the first time and The technology partners of BOOM are material. As such BOOM aims to provide
discussed their joint activities within the pioneers in the field of silicon photonics a new generation of active and functional
new project. not only on a European but also on an silicon photonic components including:
The BOOM consortium consists of industrial level. The particular roles of ultra high speed wavelength converters,
highly skilled organisations with a proven AMO, Aachen Germany, within this high speed transmitters and WDM
track record in the field of photonic project consist in the evaluation of single photodetectors.
integration acting from basic research to project results to ensure industrial In addition, BOOM invests in the
application. applications. development of improved CMOS
In order to overcome technology The main objective of the BOOM compatible waveguide technologies to
roadblocks and re-enforce the European project is the systematic advancement of fabricate miniaturised, low loss and fully
position in high value photonic products, Silicon on Insulator (SOI) integration reconfigurable wavelength routing cross
BOOM is setting up communication technology to develop compact, cost connects based on two dimensional grids
channels between three European SMEs effective and power efficient silicon of serially interconnected micro ring
(AMO, LioniX, EXELITE), one major photonic components. resonators.
telecom operator (Telecom Italia), three These components will enable photonic The project refers to the European
European universities (ICCS/NTUA, TU Tb/s capacity systems for current and new research program ICT-2007-2 Photonic
Berlin, Technical University of Eindhoven) generation high speed broadband core Components and Subsystems .
Two giants join for new photomask process
TOPPAN PRINTING announced that it implementation of many new IBM Semiconductor Solutions. “This
has entered into a new development technologies such as EUV lithography collaborative effort builds upon our joint
agreement with IBM that covers the last and nano imprint, but many technical progress at 45nm and 32nm and sets us
phase of 32nm photomask process issues remain outstanding. So IBM has on a path to deliver the photomasks
development, and all phases of 22nm determined to pursue with Toppan needed for next generation chip
photomask process development. This Printing the joint development of a manufacturing production. IBM is very
joint development will take place at 22nm photomask process by technical proud of its relationship with Toppan
IBM’s Burlington photomask facility innovation of ArF immersion Printing.”
starting in June 2008. lithography, the current mainstream “It is a great pleasure for us to enter
It is vital that semiconductor and technology for the manufacture of 32nm into a new joint development agreement
photomask manufacturers work closely photomasks. The photomask joint with IBM to the coming generation of
together to develop advanced lithography development efforts of Toppan Printing 22nm,” said Naoki Adachi, president of
technologies that will be needed to and IBM have aided the wafer process Toppan Printing. “During the past three
produce future generation semiconductor development conducted by IBM and years of joint work, we have been
chips. In order to keep pace with this certain of its wafer process development nurturing a strong collaboration as well
changing technological environment, collaborators in East Fishkill, NY. as a highly sophisticated technical
Toppan Printing and IBM started a joint Specifically, Toppan Printing and IBM development capability. We believe this
development of photomasks for 45nm have manufactured and provided 45nm joint initiative will place IBM and
semiconductors in 2005, and expanded and 32nm photomasks in support of Toppan Printing at the forefront of
the scope of their activities to include 45nm and 32nm wafer process advanced photomask technology
32nm development in 2007. development activities, and expect as development, and thus will enable us to
Toppan Printing has developed a well to manufacture and provide 22nm contribute to the technological
32nm photomask process at its facility photomasks in support of 22nm wafer innovation in the world’s semiconductor
in Asaka, Japan. As part of the activities process development activities. industry.”
under the new development agreement, “This newest process development Toppan Printing is the only
Toppan Printing will work with IBM to agreement with Toppan Printing builds photomask manufacturer in the world
integrate the Toppan Printing process upon the success that our two companies with the capability of providing high
into the 32nm photomask process that have enjoyed while working together quality photomask products in a timely
Toppan Printing and IBM will jointly over the past several years. This newest manner in the U.S., Europe, Japan and
develop, thus potentially optimising the agreement will help ensure we can other Asian countries. This joint
performance of the jointly developed continue to deliver innovative chip development in co-operation with IBM
process. applications for IBM systems and our will help Toppan Printing become the
As for the 22nm semiconductor OEM semiconductor clients,” said worldís premier photomask
generation, the industry is considering Michael Cadigan, General Manager, manufacturer at 22nm as well.
www.euroasiasemiconductor.com July 2008
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