p41-47 EAS IC Awards 2008 sub system and outsourcing 1/7/08 16:45 Page 45
IC INDUSTRY AWARDS PREVIEW 45
SUB SYSTEM/COMPONENT PROVIDER
IMPROVEMENT AWARD
ADVANCED ENERGY
INDUSTRIES
www.advanced-energy.com
● Reduced energy spread contributes
to extend the information limit.
Paramount RF-power delivery
Hence it improves the capability of the
system
instrument to deliver highly spatially
CARL ZEISS NTS GMBH
resolved images.
A key aspect of the this platform is
www.smt.zeiss.com/nts
power delivery accuracy and control for
increasingly complex film stacks and fine
LIBRA 200 MC
INFICON
features sizes. The 3kW Paramount
www.inficon.com
system is well suited for both etch and Libra 200: Field Emission Gun (FEG)
deposition processes in semiconductor, Energy Filtered Transmission Electron
Sion plasma arc detector
FPD, MEMS and solar photovoltaic Microscope (EFTEM). Electrons
manufacturing. Next generation device generated in the FEG are accelerated to The Sion plasma arc detector provides
fabrication processes feature anti 200 kV and interact with the sample real time, high power analyses of plasma
reflective coatings, hard masks, cap atoms in several ways while crossing it. micro arcing, which can cause damage to
layers and stop layers in their recipes. After the sample the transmitted the target, the film being deposited, and
Process designers must account for these electrons are analysed. the wafer surface in chemical vapour
layers while at the same time accurately The EFTEM allows imaging down to deposition and etch processes.
etch or deposit the primary layer that the Angstrom scale and spatially resolved Sion employs the FabGuard integration
may comprise multiple compositions and chemical and crystallographic analysis, so and analysis system to detect arcs that
doping profiles. it is necessary in all important sectors of were previously undetectable. Sion’s
The Paramount platform has been semiconductor industry: performance does not affect the tool’s RF
engineered to accommodate these ● R and D: characterisation of new delivery system characteristics.
complexities with with ultra accurate materials (high k, low k) and imaging of The non intrusive clamp on design
power control and delivery across the full the most advanced devices provides a compact sensor that connect
output range, both on and off 50 ohm, for ● Engineering: device shape and directly to the process chamber’s high
seamless process transitions in etch, strip, dimensions optimization (gate oxides, power RF delivery system to collect
PECVD, HDP-CVD, PVD and PEALD. gate shape, spacers, via etch). voltage and current information at speeds
Where pulsing is required to enable next ● Production and reliability: Physical up to 20kHz..
generation process steps, the Paramount failure analysis (root cause determination
system’s optional pulse and pulse by imaging and chemical analysis),
PFEIFFER VACUUM
synchronisation features offer the widest electromigration in back end metal lines.
www.pfeiffer-vacuum-com
pulse frequency range available, EFTEM applications often require the
according to the company. The system is analysis of the spectrum of the energy lost
CMR/CCR ActiveLine vacuum
able to keep pace, in real time, with the by the electrons while passing trough the
gauges
most abrupt plasma impedance changes, sample. The measurement accuracy is
and therefore enables faster transitions, affected by the energy spread of the
shorter process steps and reduced process primary beam electrons, which is about The CMR/CCR ActiveLine vacuum
times. Optional frequency tuning is 0.7 eV. gauges feature a ceramic technology
performed virtually instantaneously The monochromator (MC) reduces this sensor that reportedly prevents memory
(within msec spread by a factor of 7 to values around effect, provides greater resistance to
0.1 eV. The capabilities of the corrosive gases, good temperature
instruments are greatly improved as compensation, and better wear
outlined below. properties.
Improved energy resolution allows to These transmitters operate
determine the band gap variations independently of the type of gas that is
throughout a layer. Very important in being employed. The output signal, which
porous materials like low k materials or ranges from 0 to 10V, features an
materials with a composition gradient like integral error signal. The robust ceramic
some of the gate oxides diaphgram design is less sensitive
● Improved energy resolution enables to process induced effects and can
chemical and structural composition, by withstand millions of atmosphere cycles
giving access to details of the near edge and bursts.
structure. Signal processing produces an
This is important for interfacial layers, optimises measurement limit down to the
like gate oxide interfaces, which critically smallest possible measured value of 10-5
influence the electrical properties of the mbar with high stability of the measured
device. values.
July 2008
www.euroasiasemiconductor.com
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