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22 IC INDUSTRY AWARDS PREVIEW
MATERIALS ENABLING AWARD
MATERIALS
The material requirements of manufacturing microelectronic devices are as diverse as they are technically
impressive. Whether it is the material used for wafers, packaging or new materials to further technological
advancement, manufacturing depends on the timely delivery of materials with exceptional technical parameters.
ENABLING MATERIALS AWARD
This Award is for any new materials that have enabled advancement in manufacturing microelectronic devices
IMPROVEMENT AWARD
This Award recognises improvements made to existing materials either by their make up or delivery
suitable for a variety of applications. The material is specifically formulated for
UNCD Wafers meet basic foundry level creation of copper seed layers on widely
standards including wafer bow, particle adopted barrier layers (including, but not
count and thickness uniformity. limited to, PVD, CVD and ALD deposited
Most MEMS devices are based on Ta, TaN, Ti, TiN, WN, Ru and bi-layers).
silicon due to the availability of Electrografting is a wet
microfabrication techniques developed for electrochemical process based on specific
the integrated circuits industry. Diamond organic precursors enabling the initiation
has unsurpassed bulk and surface and growth of thin films on conducting
ADVANCED DIAMOND
properties that exceed those of any other and semiconducting surfaces. The process
TECHNOLOGIES, INC.
material, and UNCD Wafers are the base can produce conformal, thin, uniform and
www.thindiamond.com material for MEMS device fabrication. adherent copper seed layers, even on
The availability of 200 mm UNCD Wafers resistive barriers. It works by 'grafting'
Ultrananocrystalline Diamond Wafers and standard microfabrication techniques molecular precursors to a variety of
for processing (reactive ion etching) conductive materials, through creating
For decades designers and engineers have provide for the ability to manufacture covalent bonds between the materials.
sought to harness the unsurpassed diamond devices in a standard foundry Because the size of the precursors being
properties of diamond for MEMS and environment. introduced is in the order of 0.5nm, it
electronic devices. Despite the keen UNCD Wafers are a critical enabling provides a method of depositing material
interest, diamond has been notoriously technology because they provide the at the scale required for leading edge
difficult to work with, is prohibitively mechanism for designers to begin building process nodes, both today and in the
expensive for mainstream applications diamond devices today. . future. The substrate is placed in contact
and there hasn’t been a reliable supply. with a wet solution and the process
Enter UNCD Wafers. operates by applying a small electric
UNCD Wafers from Advanced current: due to the very nature of the
Diamond Technologies, Inc. suddenly molecular precursors and of the reaction
make diamond affordable and accessible mechanisms they can undergo, unusually
for MEMS and IC applications. UNCD
ALCHIMER
small amounts of current - of the order of
(for ultrananocrystalline diamond) is the
www.alchimer.com 1 to 10 µmA/cm
2
,
are enough to trigger
only phase-pure nanocrystalline diamond the process uniformly at any point of the
film in the world and is comprised of eG ViaCoat material for TSV surface of the substrate. This is called the
diamond grains that are as small as 5 nm metallisation electro-initiation step, which involves
in diameter—a billion-fold smaller in electronic transfer from the surface to the
volume than in traditional diamond films. eG ViaCoat is the enabling material for adsorbed precursors at chemical bond
UNCD differs from other nanocrystalline Alchimer's breakthrough proprietary distance.
diamond films in that other films are electrografting process. eG ViaCoat has Once the surface is "seeded" with
comprised of graphitically-bonded been developed specifically for the adsorbed activated moieties, the same
material intermixed with crystalline metallisation of high aspect ratio through- precursors can undergo alternative
diamond grains. UNCD, in contrast, has silicon vias (TSVs) used in advanced 3D chemical reaction paths which lead to the
no amorphous or graphitic phases. UNCD packaging applications. formation of the desired layers: while the
Wafers capture the hardness, modulus eG ViaCoat is a mild acidic aqueous process is controlled by the electro-
and other extreme properties of natural copper electrolyte solution that enables initiation step, subsequent steps
diamond but are also smooth and have the deposition of ultra thin, homogeneous, immediately following the electro-
very low internal stresses making them uniform, adherent and conformal layers. initiation may involve purely chemical
www.euroasiasemiconductor.com July 2008
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