p27-34 EAS IC Awards 2008 yield management 2/7/08 09:56 Page 32
32 IC INDUSTRY AWARDS PREVIEW
training any customer employee, not just ● SEMI Specification Silicon Wafers
yield management experts, can be up and 200 and 300 mm diameter wafers
running with the tool), and stability available in X or X,Y configuration.
(Floorvision tool is server based).
This product has allowed for a vast
MFG VISION
improvement in the precision and
www.mfgvision.com matching of production CD-SEMs and has
enabled the use of the CD-AFM for
FloorVision yield management
VLSI STANDARDS, INC.
accurate linewidth measurement during
software
www.vlsistandards.com process development and line monitoring,
both in the wafer fab and in the mask
The FloorVision software tool provides NanoCD Standard shop. Prior to the release of NanoCD, the
faster resolution of semiconductor yield absolute accuracy of the CD-AFM
issues through integrated Yield NanoCD (NCD) is the first commercially linewidth metrology was limited to about
Management, SPC (Statistical Process available standard to provide line width 5 nm, which does not meet the ITRS
Control)and rapid root cause analysis. In accuracy calibration at the 45 nm, 65 roadmap requirement.The only available
FloorVision, customers have fab, wafer nm, 90 nm and 130 nm nodes (and 32 solution to accurate linewidth metrology
sort and test data linked seamlessly using nm coming!). Use these standards for tool was cross section TEM, which is
genealogy. matching, calibrating the width of a CD- destructive, time consuming, and
Customers can manage product AFM tip, or CD-SEM diagnostics. The expensive. With the use of the NanoCD,
performance during characterisation, NanoCD consists of a small chip Critical Dimension metrology tools can
yield ramp and volume production. Supply containing a single isolated line 4 mm exceed the ITRS requirements for
chain visibility and traceability of parts long (3 mm certified), offering thousands linewidth metrology, in a fast, non
are improved. of distinct measurement sites. destructive, and inexpensive way. CD-
All reporting is dynamic, interactive Chips are fabricated at VLSI SEMs have many critical system
and shareable with teams across the Standards using a patented technique that parameters that may unexpectedly change
world in a secure environment. User- results in lines with high uniformity and over time.
defined exception reporting automatically low associated uncertainty, unachievable These include beam size adjustment, auto
communicates product performance through conventional lithography focus precision adjustment, depth of field
variances, increasing productivity and methods. adjustment, astigmatism, electronic
satisfaction levels amongst product For compatibility with wafer handlers, filtering algorithms, and tilt and
engineers. the chip is mounted to an etched pocket column/s tage alignment to name a few.
With its highly scalable configuration, of a silicon wafer carrier. Global The NanoCD Standard can be used on a
this web 2.0-based data management alignment marks, rulers and pattern daily basis to discover and diagnose these
system integrates Manufacturing recognition features extending from the potential variables.
Execution Systems (MES) based chip to the wafer ensure that the target is With CD-AFMs, it is paramount that
reporting, genealogy, semiconductor always located, and measurements can be the user know the size and working
fabrication, wafer probe and test data in repeated. condition of the probe tip being used on
a seamless flow across multiple The width of the line, or the Critical the instrument. With the NanoCD, the
geographies. This means that engineers, Dimension (CD), is certified with TEM user can now measure the certified
managers and executives can accurately and is traceable to NIST and to the linewidth, and thereby calibrate the tip
capture critical data, speedily determine international system of units (SI) through width.
the root cause of product failures, the atomic lattice spacing of single This ensures that the CD-AFM
efficiently correlate failures to process crystal silicon. provides accurate measurements. The
parameters, and quickly disseminate Product Specifications same calibration procedure is to be
thorough yield reports to team members ● Nominal CD Values followed periodically, because the tip
and other key decision makers. 25 nm, 45 nm, 70 nm, or 110 nm. width changes over time due to wear.
The result: reduced downtime from There are no commercially available
process failures, improved productivity for ● Accuracy competing products. The only alternative
product and test engineers, and lower IT 25 nm ± 0.5 nm, 45 nm ± 0.7 nm, for accurate linewidth metrology is cross
costs. Among the key attributes of the 70 nm ± 0.7 nm, 110 ± 0.8 nm section TEM.
FloorVision tool are: extremely fast data The NanoCD is also NIST traceable,
processing (results are available to the ● Material of CD line allowing users to meet quality system
user in seconds), ease of use (with a little Amorphous Silicon requirements. The certified lines have a
high accuracy (<1 nm uncertainty), low
● Length of Line line edge roughness, high contrast, and a
The IC Industry Awards
3 mm certified large measurement area (4 mm in line
length).
2008 will be presented
● Defectivity of Line The standard is available in various
at SEMICON Europa
5% Max. (150 µm of total 3,000 µm) configurations such as wafer form for
semiconductor and MEMS
in Stuttgart on
● Traceability manufacturers, mask form for photomask
Traceable to the SI units through the manufacturers and lithography concerns,
7th October atomic lattice spacing in the silicon and sample mounted for users of
crystal by TEM analytical instruments.
www.euroasiasemiconductor.com July 2008
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88