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28 IC INDUSTRY AWARDS PREVIEW
almost all
proprietary charge compensation
development and SPC / APC. The Mentor
currently existing
technique to mitigate electron beam
is designed to monitor changes in process
mask repair interaction with surface charging. A performance, and quickly determine
technologies e.g. combination of annular secondary whether device manufacturers’ process
focus ion beam,
electron detector and annular energy
steps are operating correctly by
nanomachining or laser repair.
selective backscattered electron detector,
measuring the mass change of any
With the continuing decrease of feature
is mounted in the column. These detectors
product wafer through a process step.
sizes on photomasks, the rising costs and
are specifically optimised for the purpose
Simple statistical analysis of the
the necessity to manufacture 100% error
of high definition imaging. Furthermore
measurement data enables the tool to
they are used for ultimate precision and
free reticle it is essential to have one
automated end-pointing of repair
reliably and accurately identify process
industrial solution to perform reliable
processes. As a result the MeRiT MG 45
changes after deposition, wet or dry etch,
repairs on photomasks.
system delivers the highest first pass yield
or CMP Processing. The tool achieves
MeRiT MG 45 is the only viable of any repair tool known to the industry.
measurements down to the equivalent of
solution meeting the challenging Employing electron beam technology one Angstrom of material thickness over
requirements for mask repair at the 45 overcomes the physical limits of existing an entire wafer.
nm node. The system allows opaque and mask repair technologies and has the
In simple terms, by measuring the
clear defect repair in one platform. following strong advantages:
change in the wafer mass, variations can
Thereby electron beam induced chemical ● Superior resolution and accuracy for
be detected on product wafers, and
gas phase reaction in ultra high vacuum all known kinds of repair
problems in the process can be identified
for either selective etching or deposition ● Repair process causes no transmission
very early on, saving valuable time,
of the respective mask materials. loss and no contamination
Compared with previous technologies
money and wafers. The technology is
● No mask structure modification during
the MeRiT MG 45 uses a high resolution imaging allowing degradation free
extremely reliable and cost effective,
low energetic electron beam instead of review cycles
improving yield and reducing scrap with a
ions or tips. This principle outperforms all
low cost of ownership. The Mentor’s
● E-beam induced chemical reactions
other concepts. The process is only limited without any sputter contribution measurement technique is effective for all
by the diameter of the electronic beam, ● Automated repair identification substrates, wafer sizes, wafer types and
which can in principle be downsized to Automated repair endpointing
materials. It is non destructive and
sub nm range. Furthermore, the use of ● High imaging signal-to-noise ratio
compatible with product, test and blanket
electron beams prevents radiation damage allows excellent defect review
wafers.
on the photomask. ● Multi-node capability down to 45nm
The Mentor provides a family of
The MeRiT MG 45 has an automated node and in some respects even below
reliable, low cost, high throughput, fully
die to reference and die to database ● All-in-one-tool minimising processing
defect recognition. This allows a high overhead
automatic mass determination tools with
level of automation to ensure
atomic layer repeatability for high volume
reproducibility and efficiency. The repair MeRiT MG 45 enables the repair of all
manufacturing environments. Capable of
process itself is partially automated as kinds of photomasks including phase
throughputs of 60 wafers per hour, the
well. Depending on the material shifting masks with tuneable phase and
Mentor tool has a small footprint of only
2
automated recipes choose the appropriate transmission matching. It is also suitable 2 m and provides nanotechnology mass
precursor gases, either a local etch or a for next generation lithography such as
measurement of product, test and blanket
local deposition. Even defects which NIL or EUV. MeRiT MG 45 is the only
wafers independent of substrate size or
require complex combination of different photomask repair technology for 45nm
material.
etch or deposition steps can be repaired. node enables manufacturing of advanced
Photomasks typically have a surface photomasks. ZEISS photomask repair ● Metryx has fully automated 300mm
which charges up when using electron or system led to paradigm shift in mask in-line metrology systems running
ion beams. The MeRiT MG 45 has a repair technology Optimises yield of high volume production, and has been
end photomask manufacturers. This is the endorsed by major 200 mm and 300
only concept which is applicable for the mm fabs worldwide.
45 nm node and down scalable to the 22 ● Technology used is protected by
nm node (and maybe below) international patents.
● Product designs comply with SEMI
standards and industry standard
components, and software protocols
are used throughout.
● Multiple unit installations, running
critical applications in fully automated
METRYX LTD
production environments, have proven
www.metryx.net
to be both reliable and cost effective.
● Key advantages include high
throughput, low cost of ownership,
The Metryx Mentor
independent of substrate, wafer size,
wafer type and material.
The Metryx Mentor provides a new
● The measurement technique is also non
generation of metrology tool based on destructive and compatible with
innovative mass metrology for materials
product, test and blanket wafers.
www.euroasiasemiconductor.com July 2008
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