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MNS Watlow vFinal DR 27/6/08 10:30 Page 20
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MICRONANOSYSTEMS
The heat is on
Due to increased consumption of semiconductor devices, new applications are
driving improvements to all components within semiconductor manufacturing,
including heaters. Dr. Hongy Lin and Jim Kreisel of Watlow explain.
improve back end productivity in applications such
as IC test, wire and die bonders.
The continuous increase in the consumption of
semiconductor devices and the emergence of new
applications in optical components, MEMS, LCD
display, flip chip, chip on glass and multi chip
modules, has created a vast demand for faster
throughput and better die bonding equipment for
IC packaging. IC assembly applications may
require a typical ramp rate of 100ºC per second to
4-500ºC +/-2ºC and a cycle time of 7 to 15
seconds. Similarly, IC chip testing stresses chips
between 40 to 125ºC while monitoring electrical
parameters requiring a faster cycle rate.
To manufacture ICs of all types, a die bonder or
die attach equipment is to attach the die to the die
pad or die cavity of the package’s support
structure. The two most common processes for
attaching the die to the die pad or substrate
are either adhesive die attach or eutectic die
attach.
To meet the demanding requirements in both of
these processes, the temperature profile of the die
attach material must be precisely controlled to
ensure complete curing of the adhesive or melting
of the eutectic materials. The heating device must
be able to perform reliably with the following
S
characteristics:
ring6 provides a uniform temperature both during
everal trends and new requirements ramp up and steady state;
are impacting wafer processing and ring6 heats up extremely fast;
the manufacturing of semiconductor ring6 dissipates heat quickly to allow for fast
equipment components, such as heaters. Various cool down;
reasons are driving the need for component ring6 has minimum dimension change durin
improvements such as an increase in the temperature cycle;
consumption of semiconductor devices, limited ring6 withstands compressive pressure during
space in increasingly complex machines and the operation;
ongoing push for increased productivity. ring6 is highly finished with smooth and flat
Increasing productivity in front end wafer surface to enable heat transfer;
processing has been made possible in part by 300 ring6 constructed with mechanical features such
mm wafers, which offer more devices per wafer. as grooves and holes for vacuum
But when dealing with back end assembly, the passage and/or curved surfaces;
same economy of scale cannot be achieved because ring6 rapid sensor response time/short sensor
every individual device must be assembled, response time for precise control of
packaged and tested. Speed and thermal temperature profile;
repeatability are two key techniques being used to ring6 operates under high power density.
www.micronanosystems.info July 2008
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