p52-56 EAS IC Awards 2008 wafer processing 1/7/08 15:55 Page 55
IC INDUSTRY AWARDS PREVIEW 55
ratios. Reliable metallisation of TSVs ● Offers metrology solutions for Etch,
with aspect ratios of 13:1 is now possible. Lithography, CMP, and CVD.
Electrografting enables significant NovaScan 3090Next IM integrated
reductions in cost of ownership (CoO) metrology platform provides a metrology
compared to dry vacuum processes. For solution, implementing polarised normal
example, for 10:1 aspect ratio TSVs, the incidence spectroscopic scatterometry
CoO of Alchimer’s electrografting process with an extended UV and IR spectral
is 85% less than that of a traditional range. Featuring the highest fleet (tool to
PVD process. The cost advantage tool) matching and throughput, the
increases further at higher aspect NovaScan integrated platform is a cost
effective metrology solution for the most
NOVA MEASURING
demanding 2D, 3D, and in-die Optical CD
INSTRUMENTS LTD.
and shape profiling applications down to
FSI INTERNATIONAL, INC.
www.nova.co.il
32 nm.
www.fsi-intl.com
NovaScan 3090Next
● High-end metrology and APC
ZETA Spray Cleaning System with
enabler down to 32nm
ViPR Technology
NovaScan 3090Next leverages a ● Best fleet matching with no need for
combination of Spectroscopic, recipe adjustment or calibration The ZETA Spray Cleaning Systems are
Reflectrometry and Optical Scatterometry ● Unmatched throughput and sophisticated surface conditioning systems
technologies in tandem with Nova's reliability results in lower CoO that remove unwanted films and
proprietary productivity tools to deliver ● Full compatibility with Nova's SA contaminants from the surface of
the market's most advanced solution for platform enables a mixed solution semiconductor wafers at various stages in
High Volume Manufacturing (HVM) ● With NovaMARS, provides the microelectronic device fabrication
environments. Nova offers both a advanced 2D/3D and in-die modeling & process. Wafers are processed in multiple
standalone platform, NovaScan measurement cassettes on a turntable inside the
3090Next SA and integrated metrology ● Offers a range of metrology system's process chamber. As the
systems, NovaScan 3090Next IM. solutions for Etch, Lithography and CMP turntable rotates, dispense jets spray the
desired chemistry to the wafers' surfaces
Optical CD & Shape Profiling: As design rules shrink to 65 nm and to dissolve and remove the undesirable
NovaScan 3090Next SA standalone below, CD measurements are no longer films and contaminants. After chemical
platform provides a metrology solution, enough to determine device treatment, deionised (DI) water is sprayed
implementing polarised normal incidence characteristics and ensure performance. on the wafer surfaces to rinse away the
spectroscopic scatterometry with an New metrology challenges demand chemicals. Multiple chemistry and rinse
extended UV and IR spectral range. measurement of the full profile of a steps may be employed depending on the
Featuring the highest fleet matching (tool structure such as height, depth, and customer's specific application. The
to tool) and throughput, the NovaScan sidewall angle (SWA) of vertical profiles, process sequence is completed by
standalone platform is a metrology foot, notch, high aspect ratio contacts, dispensing high flow nitrogen through
solution for the most demanding 2D, 3D, and more. separate jets to dry the wafers and the
in-die Optical CD and shape profiling As the correlation between test processing chamber. Our control system
applications down to 32 nm. structures and in-device parameters and chemical mixing manifold allow the
● High-end metrology meets 32 nm deteriorates, the need for in-die user to define, control and monitor a
requirements measurement capabilities increases. variety of chemical mixtures,
● Best fleet-matching with no need for Shrinking process windows dictate temperatures and sequences.
recipe adjustment or calibration similar shrinkage of the Total Metrology FSI ZETA Spray Cleaning Systems
● Unmatched throughput and Uncertainty (TMU), making high with ViPR Technology delivers the highest
reliability results in lower CoO precision and fleet (tool to tool) matching performance, lowest cost solution for wet
● Full compatibility with Nova's IM a critical requirement for metrology chemical material removal, including
platform enables a mixed solution solutions, while maintaining high ashless photoresist stripping and residual
● With NovaMARS, provides throughput and low Cost of Ownership. metal cleanup after salicide processes.
advanced 2D/3D and in-die modeling & Optical CD solutions are widely used in With on-wafer temperatures exceeding
measurement Etch, Lithography, CMP and CVD, in 200°C, ViPR technology maximises
many cases to replace chemical reactivity at the wafer surface
CDSEM systems. Nova's to achieve the fastest stripping
Solutions for Optical CD performance with the least film loss or
& Shape Profiling damage to other materials.
NovaScan 3090 Next ViPR technology's unique ability to
metrology systems, maximise chemical reactivity at the wafer
based on patented surface provides breakthrough
normal incidence improvements across a wide spectrum of
spectroscopic front-end wet processing applications,
scatterometry, provide including Co, Ni and NiPt etch for
full Optical CD and salicide formation, PR strip and post ash
shape profiling for 2D clean, and wafer reclaim. The
and 3D structures on combination of fast, aggressive stripping
test pads and in-die. with minimum effect on other materials is
July 2008
www.euroasiasemiconductor.com
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88