p52-56 EAS IC Awards 2008 wafer processing 1/7/08 15:55 Page 52
52 IC INDUSTRY AWARDS PREVIEW
WAFER PROCESSING BEST TOOL AWARD
WAFER PROCESSING
The processing of a wafer to create microelectronic devices involves a number of highly complex and technical steps
to achieve the devices that drive the electronics industry. As important as each step is, it is the integration of all
these processes that determines the outcome of the manufacturing process. The processing requires diffusion, bake,
lithography, etch, implant, clean, as well as all the ancillary processes and support to create the desired outcome.
Once the tool sets are in, it is the creative approaches of the engineers that ensure constant creative leaps.
BEST TOOL AWARD
This Award recognises the tool that has enabled wafer processing to create both new and improved devices. Within
the machinations of microelectronics manufacturing, there are bottlenecks delaying technical advances that are not
always obvious. The manufacturers of devices know exactly what has assisted them to achieve corporate goals and
here is a chance to recognise these achievements.
BEST PROCESS AWARD
Integration of all the manufacturing ingredients is the key to success. This Award is for the company, individual or
organisation behind the development of key integration processes for successful wafer processing
ASM AMERICA, INC.
www.asm.com
Pulsar 3000 ALD Module
The Pulsar 3000 ALD module is a
AVIZA TECHNOLOGY, INC.
single wafer reactor that enables www.aviza.com
deposition of high-k materials for
transistor and capacitor products.
Versalis fxP
Atomic Layer Deposition (ALD) is a
Aviza’s Versalis fxP system is a single
surface controlled layer by layer process
wafer 200/300 mm cluster tool that
for the deposition of thin films with
integrates multiple processes (including
atomic layer accuracy. The ALD process
can be used to produce single or multiple
etch, PVD and CVD) all on one platform.
layers of oxides, nitrides, or metals. The
Targeted for advanced research and
surface controlled growth mechanism
development (R&D) activities for 3D-IC
provides excellent step coverage on aspect speed ALD processes with single reactor
devices, Versalis fxP offers a route for
ratios as large as 100:1 with no pinholes. throughputs as high as 60 WPH for 100
customers to develop their Through
The Pulsar 3000 module is being used to A films. Silicon Via (TSV) technology and easily
deposit dielectric and metal films for The module is equipped with 6 sources
migrate their processes for high volume
DRAM trench and stacked capacitors, capable of running solid, liquid and
production. This “one stop shop” solution
diffusion barrier layers for FeRAM, gaseous precursors. At a module footprint
enables customers to save money by
dielectric layers for magnetic head of less than 10ft
2
, the Pulsar 3000 is
investing in less CapEx for R&D,
applications, and most recently, for highly compact and flexible ALD system
minimise installation costs and make
dielectric and metal deposition in CMOS for research, development and high
high-k/metal gate technology. volume manufacturing.
efficient use of fab area.
The Pulsar 3000 is a bridge tool The Versalis fxP is based on Aviza’s
capable of processing substrates from 150 production proven single wafer platform.
mm to 300 mm in diameter. Multiple The IC Industry Its individual modules such as deep silicon
Pulsar 3000 modules can be integrated etch, PVD and CVD have all been proven
on a cluster platform and the modules can
Awards 2008 will be
in high volume manufacturing for various
run either serially for extreme flexibility
presented at
applications including wafer level
and complex stacked films, or in parallel packaging, MEMS and power
for a high productivity solution for ALD
SEMICON Europa
semiconductors. Customers can benefit
deposition of a single film. Although ALD from Aviza’s process expertise in these
has been historically viewed as being a in Stuttgart on areas in order to meet their stringent
slow process, the Pulsar 3000's unique process specifications. For example,
delivery system and cross flow reactor
7th October
Aviza’s deep silicon etch is high rate,
design has enabled development of high while Aviza’s PVD re-sputtering process
www.euroasiasemiconductor.com July 2008
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