IC Industry Awards Preview 2009
Metrology /Test/ Yield Award
DESCRIPTION
Metrology in manufacturing occurs via a number of tools, software and
processes that rely on a strong understanding of manufacturing needs
with the goal of improving yield through early awareness of challenges.
YIELD AWARD
This Award is for the software or service which enables best in class
semiconductor inspection, measurement and test including metrology,
microscopy, spectroscopy, spectrometry, and CD measurement.
Issue IV 2009
square4
.com
Advanced Metrology
configured for 200/300mm or individual polishing zones across the
Systems (AMS)
150/200mm mixed wafer size operation wafer that are claimed to provide twice
IR3100N extended
as well as standard dual 300mm FOUP, the accuracy and repeatability of
200mm SMIF or open cassette systems. competitive systems on a wide variety of
wavelength MBIR system
The loadports can be changed in the process steps – without compromising
field to allow reconfiguration of the throughput. The Applied Reflexion LK
oasiasemiconductor
wafer handling system as customers CMP system implements a full suite of
.eur
The IR3100N, is a model-based infrared change wafer sizes or automation endpoint methods, in-line metrology
www
(MBIR) reflectance metrology solution needs. The automation backbone and advanced process control
for measuring 3D structures. The software is based on Peer Group’s capabilities. Its patented window-in-pad
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IR3100N includes proprietary optics and advanced PTO3 automation solution technology enables real-time polish
an extended near infrared (NIR) and has been tested in fabs worldwide. control of every wafer without
measurement designed for highly compromising throughput.
automated measurements of product
wafers at the 70nm node and below. The FullVision in-situ endpoint system,
The IR3100N uses a proprietary optical for all stop-in and stop-on dielectric
source and detection system to extend applications, uses broadband
the range of the tool to include the mid- spectroscopy to significantly improve
infrared and near-infrared spectral Cpk and minimise wafer scrap caused by
ranges 500 to 11,000cm-1 (20 to 0.9µm)
Applied Materials Inc.
drifts in consumable sets and incoming
in a single measurement without wafer variations. The system
sacrificing sensitivity,
FullVision System
demonstrates high repeatability across
reproducibility, or data acquisition time. all applications with less than 150
angstrom, 3-sigma endpoint accuracy on
When combined with the pattern Applied Materials ‘FullVision’ system patterned wafers.
recognition capability of Cognex enables real-time control of dielectric
‘PATMAX’ and real-time auto-focus CMP processes for the 45nm node and
capability, the IR3100N is suited for beyond. The FullVision system couples
online, highly automated measurements Applied’s patented window-in-pad
of product wafers at the 7nm node and technology with multiple-wavelength
below. This extended range enables spectroscopy to deliver advanced in situ
more accurate and repeatable endpoint capability for a variety of
measurements of shallow structures such dielectric materials, including oxide, STI
as Recess 2 or Recess 3 in DT DRAM and poly CMP applications. As films
applications, as well as significantly become thinner, CMP becomes
improved accuracy and repeatability for increasingly difficult, requiring much
thin (20nm) epitaxial film measurements. more precise wafer-to-wafer process
Winner :Yield Management Best Tool
The IR3100N uses the AMS Series 3000 control to achieve acceptable yields.
2008 Winner Metryx Ltd
platform. This highly automated, E84 Using broadband spectral analysis,
www.metryx.net
capable, dual loadport system can be FullVision technology monitors
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