IC Industry Awards Preview 2009
footprint that consumes less power than integrated process tools. The PR-33-S substrates temperature. With the high
comparable high-flow systems, lowering monitors in real time the chemical deposition rate typical film thicknesses
the cost of ownership, according to the concentrations and provides an ethernet of 3 – 10 µm can be achieved easily and
company. output signal and immediate feedback, production can be run as a cost effective
if the chemical is not within the batch process.
The Z2 purification technology is specifications. The concentration is
designed to provide outlet purity in sub determined by making an optical Thicker layers as thick as 100 µm have
part-per-trillion levels and reduces measurement of the solution’s refractive been demonstrated in R&D. They have
environmental impact because it is index. The advantage of this principle is proven to exhibit low stress in the
longer lasting than other media. The that the same instrument can be used deposited layers and leverage from their
system delivers XCDA (eXtreme Clean to measure any chemical. thermal expansion being matched to
Dry Air) purge gas to scanner platforms silicon.
including immersion lithography tools. The PR-33-S consists of an ultra pure
XCDA is proven to be an effective and PTFE teflon sensor and an ethernet The glass layer can be microstructured
safer alternative to other purge gases connection, connectors and cabling that by lift-off. Since the deposition process
for lithography applications, the any standard PoE switch can use for is working at low temperatures standard
company claims. transmitting power to the sensor and photo resists can be used for masking.
data to a computer. The average
The modular design of the Aeronex claimed payback time for this As a mainstream application the glass
system enables expansion from 5,000 refractometer is 3-6 months. thin-films are used for passivation of
slm up to 20,000 slm total capacity per opto-semiconductors on Si or GaAs
system and may be configured to suit a easily meeting harsh environment
The IC Industry Awards
variety of fab layout requirements, reliability requirements e.g. for
will be presented at
significant savings costs in facility automotive or space applications.
SEMICON Europa 2009
utilisation and energy.
The high-volume Lithoglas process is
MSG Lithoglas AG
CMOS-Backend compatible and runs
K-Patents
Cool Glass - Hermetic
e.g. on SEMI standard silicon device
22
Semicon Process
wafer, but also allows for processing
Borosilicate Thin Films.
of thin-film glass for a large variety of
www
Refractometer PR-33-S
other applications incl. Ge, InP, SiC,
.eur Borosilicate glass is well known for its LiNbO3, Borofloat or Pyrex, HTCC or
oasiasemiconductor
chemical inert behaviour and stability. It LTCC substrates or flexible substrates.
The PR-33-S is K-Patents refractometer is temperature stable and hardly
line for monitoring and measuring the dissolves in most acids, bases and The combination of a low temperature
liquid chemical concentrations solvents. It is the close-to-perfect deposition process with the excellent
throughout the whole semiconductor material for semiconductor packaging in properties of glass being hermetic,
fabrication process, from chemical respect to its electrical, chemical and chemically stable and robust enables a
.com
supplies to fab in-line and tool in-situ physical properties. Through being unique and revolutionary solution for the
chemical quality control. successful in special applications like passivation of semiconductors or other
anodic bonding or glass-to-metal seals, sensitive devices.
square4
Issue IV 2009
The PR-33-S is specifically designed for the use of glass for mainstream
the ultra clean environments and packaging of semiconductors was The Lithoglas process is a unique
limited by lacking CMOS process approach bring WLP to a new level of
compatibility and other limitations. reliability. It has the potential to replace
polymers in harsh environment
MSG Lithoglas AG has developed and applications and to expand the
implemented a deposition and conditions of use for low cost
structuring technology, which enables electronics.
the production of microstructured
borosilicate glass thin-films with a The cost-effective, CMOS compatible
thickness of 100 nm to 30 µm on a large process can act as a drop-in
variety of substrates at temperatures replacement of CVD or polymer
well below 100 °C. passivation leveraging from existing
infrastructure ensuring excellent and
The deposition of the glass is done by a stable manufacturability. The technology
Winner Materials Improvement 2008
plasma-assisted e-beam evaporation approach is new and inventive, matching
DuPont /EKC Technology
process. It is a high rate deposition the requirements of advanced wafer-
www.ekctech.com
process with at the same time low level packaging.
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