IC Industry Awards Preview 2009
Materials: Enabling Award
DESCRIPTION
The material requirements of manufacturing microelectronic devices are
as diverse as they are technically impressive. Whether it is the material
used for wafers, packaging or new materials to further technological
advancement, manufacturing depends on the timely delivery of materials
with exceptional technical parameters.
ENABLING AWARD
This Award is for any materials that have enabled advancement in
manufacturing microelectronic devices.
Issue IV 2009
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National University has reported rapid adoption of ToRuS in production
outstanding process performance, of Giant Magneto-Resistive (GMR) and
illustrating that highly pure ruthenium Tunneling MagnetoResistive (TMR) read
oasiasemiconductor
films with low resistivity ~20 sensors by low temperature ruthenium
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µΩ.cm for
20nm film), perfect step coverage in ALD, and other novel applications
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high aspect ratio features (> 95%, in AR requiring high purity ruthenium film
Air Liquide Electronics
13), and superior thermal stability (Rapid deposition are being actively pursued by
19
ToRuS: ALOHA’s Total
Thermal Annealing at 750°C) can be OEMs and industrial consortia
obtained with ToRuS. Furthermore, high worldwide. This product has promise for
Ruthenium Solution
surface reactivity of ToRuS enables ALD both the semiconductor and hard disk
at 150°C without incubation time. drive industries and has achieved
ToRuS was developed in 2005 as a part ToRuS claims more than 30% reduction recognition as an enabling material.
of new ruthenium precursor in material cost when compared with
development project in Air Liquide conventional organo-metallic ruthenium
Corporate R&D Laboratories. sources.
ToRuS is based on a carefully tuned
proprietary formulation containing an In addition, high precursor efficiency in
inorganic ruthenium compound in a ToRuS based process results in further
tailored solvent mixture. Its relatively reduction in process cost of ownership.
high vapour pressure (10 Torr at 25°C) ToRuS is a non-flammable, non-
Agilent Technologies
compared to other commonly available corrosive, solution. It is an unregulated
ruthenium precursors allows high product for transportation purposes and
Long-life DUV Optical
deposition rates without the need for has no obligatory labelling requirements
Coatings
canister or line heating. for oral toxicity (confirmed by tests
performed following the European Agilent Technologies, with their deep-
Several academic institutions, industrial Community, the OECD and the EPA UV optical coating, provide for highly
consortia, and equipment makers in US, Health Effects Tests guidelines). accurate and reliable beam delivery in
Asia, and Europe have evaluated ToRuS leading-edge semiconductor
over the last 3 years. ToRuS has been Developing a cost effective Ruthenium photolithography systems. The
successfully demonstrated to yield metallization solution is a key challenge challenges for system designers include
excellent quality ruthenium thin films for various applications in the coating compaction and optic lifetime.
by CVD and ALD with high deposition electronics industry. ToRuS is a proven The proprietary high-throughput UV
rates (1.8 Å/cycle by ALD) and good enabler of advanced manufacturing coatings claim to increase component
adhesion characteristics on a variety of technologies, providing elegant process lifetime while minimising compaction.
substrates (Si, SiO2, SiN, SiC, Al2O3, solution, at the lowest cost of The long-lifetime optics reduce
Ta2O5, TaN, HfO2,and La2O3). ownership, with proven performance. production costs by extending the time
Recently, a research team at Seoul These differentiators have allowed a between required maintenance cycles
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