16
COVER STORY
Right: Figure 1:
Diagram
of how molecular
dispersion would
look in Kimura K13X
Far Right: Figure 2:
Diagram of how an
organic filled
elastomer would look
on a molecular level
in some processes even nano filled materials suffer Perlast’s Material Technology department.
from particulation issues. The Kimura technology is fully homogenous and
With Kimura K13X, the absence of any filler, results in a material that provides excellent tensile
even an organic one, means no differential etching strength. This controlled molecular architecture
between polymer and fillers. Due to this key change means that the material is self reinforcing and has
in material developments Kimura shows very low no need for fillers of any kind.
levels of particulation in both hot and cold This homogenous formulation offers Perlast
processes. This breakthrough will assist improved control over the material characteristics
semiconductor manufacturer’s in improving quality and removes the need for fillers that are potentially
and reduce costs for associated manufacturing damaging. This is demonstrated in Figure 3, where
requirements. a scanning electron micrograph shows the
Representing the latest advance in elastomer structure of Kimura K13X.
technology, Kimura K13X has a number of Results from customer evaluation are the best
intertwined chemistries, with a morphology known way of showing the performance of Kimura K13X
as an ‘interpenetrating network’. This network is in a series of demanding environments.
intimately mixed on a molecular level, producing
material that is different to any elastomer on the Case Study 1
market today. An example of the morphology is Independent testing of Kimura K13X showed that
Figure 3: SEM shown in Figure 1. the material had the lowest etch rate of all the
micrograph of a This breakthrough in elastomer technology has materials tested; the graph in Figure 4 shows the
section through been possible through the application of carefully comparative erosion rate in µm/hr of six different
Kimura K13X controlled chemistries developed in house by elastomers when exposed to HBr/NF
3
/O
2
plasma.
Weight (gm)
Case Study 2
In trials to determine the suitability of Kimura
Material Pre-Etch Post-Etch Total Weight
K13X for use on Producer equipment, the samples
Weight Loss/RF-hr
were exposed to a high concentration of NF
Loss
3
and
O
2
process gases at 80°C and ambient pressure.
Competitor 1 0.8007 0.6194 0.1813 0.0166 The customer assessed the plasma etch resistance
(highest) (highest)
of Kimura K13X compared with other compounds.
Competitor 2 0.7445 0.5975 0.1470 0.0135
Results showed Kimura had excellent performance.
Figure 5 shows micrographs of the surface of the
Competitor 3 0.7613 0.6518 0.1096 0.0101
material before and after exposure to the process
Competitor 4 0.7544 0.6236 0.1307 0.0120
chemistry.
Kimura K13X 0.6611 0.5694 0.0917 0.0084
(lowest) (lowest)
Case Study 3
Table 1 shows the results of independent
Table 1: Weight loss in Cleaning Process benchmark testing comparing the erosion rate of
www.euroasiasemiconductor.com September 2008
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