NEWS DESK
13
e2v Technologies to
Infineon’s
acquire QP Semiconductor
market position
e2v technologies plc has announced that
reinforced
its subsidiary, e2v Holdings, has Keith Attwood, Chief Executive said:
conditionally agreed to buy QP “We are delighted to announce the
Semiconductor (QP) for an initial cash proposed acquisition of QP, which INFINEON TECHNOLOGIES
consideration of US$65m. represents a significant opportunity for reaffirmed its market position in
QP is a US based designer and the Group and is an important step in semiconductor discretes and modules for
supplier of specialty semiconductor establishing an operational footprint in power electronics and outperformed the
components used in military and the USA. It will increase our market global market in 2007.
aerospace applications. Its extensive share in the aerospace and defence sector According to the latest study of
product range addresses a niche sector and expand our relationship with global market research firm IMS
within this market, designed to deliver contractors to the US Department of Research, Infineon expanded its market
high performance in extreme conditions. Defence.’’ share to 9.7 percent of the global power
QP will strengthen the Group’s market “This acquisition will significantly discretes and modules market.
position in high reliability specialist enhance our presence in the high Infineon’s power electronics’s sector
semiconductors as well as expand e2v’s reliability specialist semiconductor grew by about 23 percent in 2007,
business from this niche sector by circa market and the board believes that the while the global market increased by 9.3
40%. QP achieved compound annual sales acquisition of QP will deliver earnings percent to USD $13.6 billion (from
growth of 27% from 2005 - 2007, with enhancement in the financial year ending USD $12.5 billion in 2006).
2007 operating margins of 35%. March 2009 and material enhancement in The market research firm forecasts
The enlarged Group will benefit from the year ending March 2010.’’ that the power semiconductor discretes
the ability to better service New employment contracts have been and modules market will grow at an
complementary global markets and agreed with QP’s co-founders John average annual rate of 8 to 9 percent
establish a US manufacturing base Stannard and Gary Voget who will remain over the next five years.
servicing the aerospace and defence with the business during the course of the “Despite concerns of a weaker
sector. earn out and the leadership succession market in 2007, demand remained
Completion of the acquisition is plan is well progressed. healthy and impressive growth was seen
conditional on the approval of e2v’s Other key management and staff will in many parts of the market,” said Ash
shareholders, which will be sought at a transfer to e2v under their existing Sharma, research director and co-
general meeting to be held on 18 employment terms including Jim author of the The Global Market for
September 2008. Completion is also Townsend, QP’s Director of Marketing. Power Semiconductor Discretes &
conditional on the receipt of certain other There will be no changes to the Board of Modules 2008 report at IMS Research.
regulatory approvals and is expected to e2v following the acquisition. A new Chief “Power semiconductors and modules
take place on 30 September 2008. A Financial Officer of QP has been minimise power dissipation and
circular will shortly be posted to appointed to accommodate the plc maximise energy efficiency throughout
shareholders. reporting requirements. the entire value chain from energy
generation to energy distribution and
consumption,” said Arunjai Mittal,
Organic CMOS type transistor
Senior VP and GM of the Power
Management and Drives business unit at
THE success of today’s digital electronics dopants allows establishing p- and n-type Infineon Technologies.
is based on the CMOS technology. field-effect transistors based on a single Enhanced efficiency in management
Novaled found a way to translate the pentacene semiconductor layer. of electrical power provides a huge
classical inorganic CMOS approach to the By use of thin layers of p- or n-type potential for energy saving in electrical
world of organic electronics.The classical dopants on the source/drain contacts, the motor drives, power supplies, computing
silicon CMOS technology is combining p- transistor becomes either purely p- or n- equipment, consumer products, lighting
type and n-type silicon transistors. Silicon type which allows for high noise immunity equipment as well as in cars where they
CMOS are currently used for any and low static power consumption. The are a key component to improve fuel
computing applications. Their costs are currently achieved mobilities are in the efficiency and reduce emissions.
too high however to address broad fields order 1E-2cm≤ /Vs for both conductivity One of the fastest growing
of application for which a simple types. applications that considerably benefit
electronic with any cheap support like “Novaled has already achieved strong from efficiency improvements are solar
paper are requested. positions in OLED with its Novaled PIN inverters for photovoltaic systems as
The organic industry, besides display OLED technology for display and lighting used on roof tops and photovoltaic
and lighting applications, is targeting this applications” says Gildas Sorin, Novaled power plants. IMS Research projects
low cost electronic. CEO. The p- and n-dopant we have that solar inverter shipments will grow
Organic CMOS type transistors need to developed for these two applications prove annually by more than 20 percent over
be developed. Currently, most of the to be groundbreaking for organic the next five years.
developments are based on pentacene, an transistors as well. Novaled will further According to the report the overall
organic material which usually allows for develop its capability in digital organic power semiconductor market in 2007
p-type transistors only. Nevertheless, the which will become a major market in the totalled about USD $13.6 billion.
use of Novaled’s proprietary p- and n- coming future”.
September 2008 www.euroasiasemiconductor.com
Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76