IC Industry Awards Winners
Award Materials - Enabling
System ToRuS: ALOHA's Total Ruthenium Solution
Company Air Liquide Electronics
ToRuS: ALOHA’s Total
Ruthenium Solution
Issue VII 2009
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ToRuS was developed in 2005 as a part of new
ruthenium precursor development project in Air
Liquide Corporate R&D Laboratories.
ToRuS is based on a carefully tuned
proprietary formulation containing an inorganic
oasiasemiconductor
ruthenium compound in a tailored solvent
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mixture. Its relatively high vapor pressure (10
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Torr at 25°C) compared to other commonly
available ruthenium precursors allows high
27
deposition rates without the need for canister or
line heating.
Several academic institutions, industrial
consortia, and equipment makers in US, Asia,
and Europe have evaluated ToRuS over the last 3
years. ToRuS has been successfully
demonstrated to yield excellent quality
ruthenium thin films by CVD and ALD with high
deposition rates (1.8 Å/cycle by ALD) and good obligatory labelling requirements for oral toxicity
adhesion characteristics on a variety of (confirmed by tests performed following the
substrates (Si, SiO2, SiN, SiC, Al2O3, Ta2O5, TaN, European Community, the OECD and the EPA
HfO2,and La2O3). Recently, a research team at Health Effects Tests guidelines).
Seoul National University has reported Developing a cost effective Ruthenium
outstanding process performance, illustrating metallization solution is a key challenge for
that highly pure ruthenium films with low various applications in the electronics industry.
resistivity (~20Ìø.cm for 20nm film), perfect step ToRuS is a proven enabler of advanced
coverage in high aspect ratio features (> 95%, in manufacturing technologies, providing elegant
AR 13), and superior thermal stability (Rapid process solution, at the lowest cost of
Thermal Annealing at 750°C) can be obtained ownership, with proven performance. These
with ToRuS. Furthermore, high surface reactivity differentiators have allowed a rapid adoption of
of ToRuS enables ALD at 150°C without ToRuS in production of Giant Magneto-Resistive
incubation time. (GMR) and Tunneling MagnetoResistive (TMR)
ToRuS claims more than 30% reduction in read sensors by low temperature ruthenium
material cost when compared with conventional ALD, and other novel applications requiring high
organo-metallic ruthenium sources. In addition, purity ruthenium film deposition are being
high precursor efficiency in ToRuS based process actively pursued by OEMs and industrial
results in further reduction in process cost of consortia worldwide. This product has promise
ownership. ToRuS is a non-flammable, non- for both the semiconductor and hard disk drive
corrosive, solution. It is an unregulated product industries and has achieved recognition as an
for transportation purposes and has no enabling material.
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