16
COVER STORY
First silicon circuit edit and FIB service
Being active in FIB services with multiple single column systems
for over 12 years, MASER Engineering encountered the end of
life of multi function FIB systems. The first generations were used
for first silicon circuit edit, site specific cross section and ion
imaging, TEM sample preparation and micro machining of
MEMS devices. MASER Engineering decided to replace two of
her single beam FIB systems with a dedicated system for front
and backside circuit edit applications and a dual beam
FIB/FEGSEM system for F/A cross sectioning, imaging and TEM
sample preparation. DCG systems (formerly Credence Diagnostics
& Characterisation Group) recently installed their first OptiFIB-
IV system in Europe at MASER Engineering. This system has a
unique coaxial NIR optical and Ga+ Ion column that allows both
Above: Copper metal 2 front and backside circuit modifications. The high accurate piezo
defect in a 6 Copper layer stage with NEXS CAD navigation, new copper etching gas
device after CMP chemistry, molybdenum metal deposition and FIB assist software
preparation tools for optimised endpoint detection allow the engineers to
modify circuits down to the 45 nm technology node.
Right: Thermo Mk2 ESD/LU
test system for HBM and MM Advanced Electron and Ion Microscopy
ESD testing and dynamic The smaller feature sizes in semiconductor devices require higher
LU testing magnifications for proper imaging. Modern field emission gun
SEM systems combine high resolution optics and maintain that
resolution at decreased acceleration voltages or at variable
HBM test system (up to 30kV) for system in a package devices vacuum environments. The latter features are important for
and module testing, meeting upcoming new device test standards. imaging semiconductor layer stacks. The combination of
Finally, MASER Engineering has adapted the lower core insulators and metal layers in semiconductor devices are
voltages and need for backside Photon Emission Microscopy and susceptible for charging and result in distorted pictures at the
OBIRCH by the extension of the Hamamatsu Phemos 1000 with nominal 30kV high voltage. MASER Engineering added a high
the second generation Peltier cooled InGaAs camera. This very resolution field emission gun electron microscope to its existing
sensitive NIR camera is the best solution to trace photon SEM base. The FEI NOVA NanoSEM 230 is the latest
emissions through the backside of a chip, where the multiple generation of FEG-SEM systems for imaging and analysis of
front side metal layers prevent surface emission. nano scale devices. The defect areas of interest in ICs quite often
is hidden under the surface. Site specific cross sectioning and
Non destructive analysis and sample imaging is necessary. The versatile FEI Quanta 3D FEG system
preparation has been installed at MASER Engineering for this application.
The new facilities include a new 2D and 3D X-ray inspection The system combines a high resolution field emission gun SEM
system. The Phoenix X-ray nanomex 180CT has become a strong and a FIB column with multiple gas injection needles for
tool in F/A of package related failure modes. Also detailed non deposition and etching.
destructive inspection of lead free solder interfaces on final The combination of material removal and high resolution
product modules has gained from the technological imaging can be automated resulting in a slice and view sequence
improvements in X-ray tubes and detectors. The complementary of the defect area. The Quanta 3D FEG is also equipped with an
non destructive inspection technique uses high frequency Omniprobe system for thin lamella lift out. This is the only way
ultrasonic sound for another set of package related failure site specific TEM samples can be extracted from a
modes. Scanning acoustic microscopy is very sensitive to semiconductor surface. The 100nm thin slices are mounted on
delaminating layers issues. MASER Engineering expanded the special TEM sample holders inside the vacuum chamber. This
SAM facilities with another system and has now two identical reduces the contamination level and improves the reliability by
SAMTEC Evolution-II systems of the latest generation available, avoiding manual manipulation of these very small and fragile
with reflective and through scan capabilities and a scan samples. The Quanta 3D FEG is expected to become the core
frequency range of 10 to 400 MHz. Another set of tools imaging, analysis and preparation tool for the future F/A tasks.
improves the sample preparation techniques. Laser assisted To meet the highest resolution in electron microscopy,
plastic removal, multiple wavelength laser cutting, dual argon MASER Engineering added a FEI 200kV TECNAI G
2
field
beam milling and polishing, single chip chemical mechanical emission gun X-TWIN Scanning Transmission Electron
polishing tools and rewiring chips by semi automatic wire Microscope to the available failure analysis equipment list. This
bonders are used to get access to the defect die inside these system is optimised for EDX analysis with mapping resolutions
complex packages. Backside preparation of multiple metal layer <0,14nm. The main application for this system is detailed cross
devices is necessary to get access to the active area for fault sectioning imaging of semiconductor ICs, opto electronic devices
localisation techniques. and patent infringement material analysis.
www.euroasiasemiconductor.com August 2008
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