News & McLean vFinal DR 2/3/10 16:35 Page 6
Company News
TSMC changes mind on
EUV with ASML order
DESPITE resisting any past involvement with current techniques used to stretch
with Extreme Ultra Violet (EUV) and 193-nm immersion lithography, making
suggesting maskless lithography would it a promising lithography technology
be the path of choice, TSMC has for manufacturing IC’s for future
bought into an EUV future with the advanced technology nodes. TSMC is
announcement by ASML. evaluating EUV and other lithography
ASML Holding NV has announced technologies for their potential to
that Taiwan Semiconductor optimise cost-effective manufacturing at community which, through ASML and
Manufacturing Company (TSMC) will future technology nodes. others, will play a pivotal role in our
take delivery of a TWINSCAN NXE:3100 “TSMC will use a TWINSCAN process technology development in the
extreme ultra-violet (EUV) lithography NXE:3100 for research and future.”
system. This tool represents one of six development of future advanced “With an NXE:3100 for TSMC,
NXE:3100 EUV systems for ASML’s technology nodes,” said Dr. Shang-yi ASML is now providing EUV systems to
worldwide partners and customers. Chiang, TSMC Senior Vice President of all major segments of the chip making
TSMC is expected to be the first Research & Development. “EUV is one industry: Logic, DRAM and NAND flash
dedicated foundry conducting on-site of the next-generation lithography memory, and Foundry,” said Martin van
EUV development and will install the technologies we are investigating. den Brink, ASML’s Executive Vice
new system on its Fab 12 GigaFab for Working with this system is in line with President and Chief Product &
development of future technology our objective of maintaining advanced Technology Officer. “We look forward
nodes. technology leadership. At the same to continuing our long relationship with
EUV technology employs a much time, this agreement reinforces our TSMC by providing them with the best
shorter wavelength and has the historic commitment to investing in the possible technology for making the
potential to reduce costs associated innovative European semiconductor chips of tomorrow.”
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E-Beam Initiative increases membership
oasiasemiconductor
THE E-BEAM INITIATIVE has announced areas in optical lithography—the
that six additional companies have photomask. We are excited about the
joined the to support the new DFEB new member base given the expertise
mask roadmap for high volume they bring in mask making, and where
applications. The roadmap incorporates DFEB is headed.”
.com
new innovations to e-beam mask “Using DFEB mask technology with
making using DFEB in conjunction with 193i lithography is an innovative
e-beam mask writing equipment approach to a difficult industry problem
square4
Issue I 2010
currently on the market. and I’m delighted to work with other
Leading mask manufacturers, mask eBeam Initiative members to implement
writing equipment manufacturers, IDMs, it,” said John S. Petersen, president and
foundries, as well as lithography experts chairman of Petersen Advanced
from the industry value chain, have Lithography, Inc. and past fellow of
joined the 21 founding members. International SEMATECH. “As we
The addition of these members approach the 22-nm logic node, assist
validates the industry’s support for New members in the Initiative feature patterns become more complex
production of complex photomasks include: GLOBALFOUNDRIES, JEOL, and with this complexity the individual
needed for high-volume chip designs at KLA-Tencor, NuFlare Technology, features need to become more and
the 22-nm node and beyond. Petersen Advanced Lithography (PAL) more curvilinear. But we have to solve
Extending 193-nm immersion and Samsung Electronics. the problem of increased mask costs
lithography to the 22-nm node has CEO of D2S and managing sponsor due to significantly higher ebeam shot
been an incredible challenge for the of the Initiative, Aki Fujimura, stated, counts when using curvilinear assist
semiconductor industry. The last critical “The support from all of the Initiative features. The DFEB mask technology
piece of the puzzle to enabling optical members will enable the cost solves this by taking advantage of the
lithography at the 22-nm node turns out advantages of DFEB to be brought to naturally rounding nature of electron
to be e-beam mask writing. bear on one of the fastest cost growth beams to reduce shot count.”
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