Implant Stripping

Figure 4: Comparison of particle removal efficiency of spray bar vs. central nozzle removal chemistry delivery systems

efficiency of central nozzle, linear spray bar and linear spray bar with atomization capability as a function of material loss. The contamination challenge was wet deposited silicon nitride particles and the cleaning chemistry was SC1 (Standard Clean 1). The linear spray bar with atomization achieves the highest removal efficiency at the lowest material loss. Figure 5 highlights the low material loss and good uniformity achieved when combining the linear spray bar with the high temp SPM single wafer PR strip process. The data shows that unwanted material loss can be minimized and in many cases exceed the industry requirements.

Conclusion

As the industry transistions to 32 nm and smaller design nodes, photoresist stripping has become increasingly

challenging due to the need to minimize material loss and surface damage. The traditional cleaning approach, which uses a plasma ash in combination with wet cleans, exceeds the material loss limits of advanced proceses. A new approach, using a steam-injected SPM in a closed- chamber, single-wafer cleaning tool, has proven capable of successfully removing photoresists in all but the most extreme implant conditions by wet clean alone. An integrated spray bar dispenser ensures better distribution of the

cleaning chemistries across the wafer, thereby ensuring better uniformity during the photoresist removal process. Steam-injected SPM can reduce material loss by a factor of ten compared to an ash/clean process, while reducing process cycle time by up to 80 percent.

A single step, all wet PR stripping

process reduces overall process complexity, the number of process steps and the number of tools required, all of which contribute to lower overall cost of ownership.

Templates for Blue and UV LEDs

GaN, AlN, AlGaN, InN, InGaN

World leaders in development of Hydride Vapour Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors

• Templates

• Wafer size: 50mm-150mm • Research grade InGaN wafers • Custom design epitaxy • Contract development

• Small and large batch quantities available

Contact us now!

Email: plasma@oxinst.com Technologies and Devices International Tel: +1 301 572 7834

www.oxford-instruments.com/tdi3

Figure 5: Material loss and uniformity achieved by the FSI ORION single-wafer cleaning tool

23

Wide range of materials (GaN, AlN, AlGaN, InN and InGaN) on different sizes and types of substrates (sapphire or SiC)

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