Test and Measurement
capacitance on a wafer, or doing a C V
sweep on a two terminal nanowire
device. The parameter extractions
should be easily obtained, with
automated curve plotting. (See, for
example, Figure 5.)
Often, engineers and researchers
are expected to perform C-V
measurements with little experience
and training on the instrumentation. A
test system with an intuitive user
interface and easy to use features
Issue I 2009
makes this practical. That includes
square4
simple test setup, sequence control,
.com
and data analysis. Otherwise, the user
spends more time learning the system measurements at the probe tips Figure 5. Example of parameter
than collecting and using the data. (DC biasing down to millivolts extractions from a Keithley Model 4200-
Other considerations are a test system and capacitance measurements SCS showing doping characteristics
with thew following: down to femtofarads) (blue curve on left), which is related to
ring6 Tightly integrated source ring6 Test setups and libraries that the reciprocal of 1/C2 vs. Vg (red
measure units, digital can be easily modified curve). The right graph shows the
oasiasemiconductor
oscilloscope and C-V meter
.eur
ring6 Diagnostic/troubleshooting tools doping profile as the number of carriers
ring6 Easy integration with other that let users know whether or per cubic centimetre as a function of
www
external instruments not the system is performing substrate depth
ring6 High resolution and precise correctly.
21
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