Technology News
Freescale and Kinesys announce
breakthrough
FREESCALE AND KINESYS Test
Advantage have announced that they
have implemented breakthrough
technology that removes the historical
“wall” between in process wafer
manufacturing data and die electrical
test data in order to target hybrid
automotive quality requirements
Automotive device supplier Freescale
Semiconductor is driving quality and
Issue VIII 2009
reliability levels to ever higher standards
square4
in its manufacturing operations by
.com
employing Streetwise, an innovative
software technology from Arizona-
based Kinesys Test Advantage.
Streetwise is a unique software platform
that provides advanced multi process wafer fab parameters. Automatic multi- leveraged to its full potential. Typically,
flow data analysis capabilities for flow and across flow analysis of these in-process wafer fab measurements are
exposing semiconductor device new data sources generated from as stored into a database for lot
oasiasemiconductor
performance marginalities, thereby many as ten wafer manufacturing processing traceability and process
.eur
dramatically improving overall device process flows will allow achievement of control. Freescale and Kinesys Test
www
quality and reliability. unprecedented quality levels for next Advantage have implemented unique
Zero defect programs have become generation automotive applications. smoothing algorithms in order to
7
a norm in the automotive industry Historically, there have been translate sampled data from in-process
where quality is critical to the safety and incredible amounts of wafer fab wafer fab measurements into in-process
reliability of a company’s products. parametric data (average ratio 1/10; die measurements without adding extra
Freescale and Kinesys Test one electrical test for ten in process controls in the wafer fab. This
Advantage have combined expertise wafer fab measurements) that have development allows die level screening
and technology to extend statistical been used solely to monitor the wafer and detection of potential marginal
post processing analysis to include manufacturing processes. This same device performance through multi-flow
wafer sort electrical test screenings, wafer fab data is a rich source of analysis classification rules based on
final outgoing inspection and in-process information that has not been statistical post processing.
High K ALD agreement
ASM INTERNATIONAL and the Air Liquide have announced to further enhance transistor and capacitor performance.
that their collaboration has led to the signature of a license Ivo Raaijmakers, chief technology officer of ASM
and preferred supplier agreement for ALOHATM advanced stated, “It is essential that the whole supply chain,
precursors. Under the terms of the agreement, Air Liquide including chemicals, their transportation and storage,
will have access to ASM’s key processes and material deposition equipment and source containers reaches
intellectual property related to the deposition of advanced maturity before new materials will be adopted by our
ultra-high-k insulator films such as Yttrium-doped Zirconia, customers.
STO and BST. ASM and Air Liquide’s customers will benefit The agreement with Air Liquide is a key step to enable
from Air Liquide’s ALOHA global research, manufacturing ultra high-k materials for the industry.” Jean-Marc Girard,
and supply chain capability, with ASM’s well known Pulsar chief technology officer of Air Liquide Electronics
atomic layer deposition (ALD) system. commented, “We are proud to become a preferred supplier
The first high-k materials were introduced in mainstream of the leader in high-k ALD technology for these advanced
DRAM manufacturing in the mid 2000’s, and more recently thin film products. It is essential for chemical suppliers to
as a gate insulator material in logic manufacturing. The closely cooperate with tool suppliers on an ongoing basis.
materials are expected to be used in both types of devices High-Tech is a growth driver of Air Liquide.”
Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44