Materials
demand for PCM technology, we have made
significant progress in developing Germanium
Antimony Telluride (GexSbyTez or GST)
precursors for use in high volume manufacturing
(HVM) PCM applications.
Linked closely to successful adoption of new
materials for high volume manufacturing is the
development of appropriate bulk delivery
systems. Material quality and consistency at the
Point Of Use (POU) are the critical issues for
device manufacturing customers in achieving the
successful commercialization of new processes.
Handling, delivery,
integration, cost
As well as expertise in researching and
developing new materials for use in next-
generation semiconductors, there is also a
Future trends significant demand for deep knowledge in terms
Looking ahead, we believe that there will be a of how these new materials are integrated the
continuing focus by the semiconductor market manufacturing process for a semiconductor
will on next generation high-K and ultra high-K device, how these sometimes dangerous
dielectrics for gate and capacitor applications, chemicals are handled and how they are
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along with further development of metal gates, delivered to the process chamber so as to
new electrode materials for DRAM, and maximise efficiency, quality and yield, and
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materials for copper barrier and seed layers. minimise potential losses.
.eur With greater performance levels and There are many pyrophoric materials that
oasiasemiconductor
functionality required from semiconductors, are used in semiconductor manufacturing
phase change memory (PCM) applications, and processes, and the correct handling of these
the materials associated with those applications, materials is critical for ensuring safety, quality
are also now being more closely scrutinized. and consistency in semiconductor
PCM, a non-volatile computer memory, enables manufacturing. Materials like trimethylaluminum
scaling of ultimate feature size further than is (TMA) and trimethylgaluim (TMG) are prone to
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possible with conventional Flash memories. The ignite and form particles upon exposure to
benefits of PCM promise greater storage air/moisture. Any breach of the transfer line
capacity and superior performance for memory during manufacturing process can cause a
square4
Issue VIII 2009
devices versus Flash so, not surprisingly, PCM is potentially serious incident and compromise the
viewed as a strong replacement candidate for safety of the fab. Due to the high cost of
NAND Flash memory. In line with the anticipated modern semiconductor fabs, a shutdown of the
manufacturing process can cost as much as
several hundreds of dollars per second in terms
There are many pyrophoric materials of fab depreciation and cost due to loss of
production opportunities. Just as an example, in
that are used in semiconductor 2007, a shutdown of production fabs in Korea
cost the DRAM manufacturer in the range of $54
manufacturing processes, and the million, due to an electrical power supply
malfunction for its manufacturing site.
correct handling of these materials is To achieve the best quality semiconductor
layers and structures for device fabrication
critical for ensuring safety, quality and requires the correct combination of ultrahigh
purity chemicals. However, in order to achieve
consistency in semiconductor the most cost effective processing, the most
reliable delivery systems are needed. The
manufacturing introduction of chemicals to the deposition
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